BC807-16W Nexperia

BC807-16W electronic component of Nexperia
BC807-16W Nexperia
BC807-16W Bipolar Transistors - BJT
BC807-16W  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC807-16W Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807-16W Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.BC807-16W
Manufacturer:Nexperia
Category:Bipolar Transistors - BJT
Description:TRANS, PNP, -45V, 80MHZ, SOT323-3
Datasheet:BC807-16W Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
5: USD 0.1191 ea
Line Total: USD 0.6 
Availability : 0
  
QtyUnit Price
5$ 0.1191
50$ 0.086
100$ 0.0563
500$ 0.0497
1500$ 0.0487
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 0.1191
50$ 0.086
100$ 0.0563
500$ 0.0497
1500$ 0.0487

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Operating Temperature Max
Msl
Svhc
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BC807 BC807W BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W 1 BC327 SOT54 (TO-92) SC-43A BC337 1 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base -- 45 V CEO I =10mA C I collector current (DC) - - 500 mA C I peak collector current - - 1A CM 1 h DC current gain I = 100 mA FE C V = 1V CE BC807 BC807W BC327 100 - 600 BC807-16 BC807-16W BC327-16 100 - 250 BC807-25 BC807-25W BC327-25 160 - 400 BC807-40 BC807-40W BC327-40 250 - 600 1 Pulse test: t 300 s 0.02. pNXP Semiconductors BC807 BC807W BC327 45 V, 500 mA PNP general-purpose transistors 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT23 1base 3 3 2emitter 3 collector 1 12 2 sym013 SOT323 1base 3 3 2emitter 3 collector 1 2 sym013 12 sot323 so SOT54 1emitter 3 2base 3 collector 1 2 2 3 1 001aab347 006aaa149 SOT54A 1emitter 3 2base 3 collector 1 2 2 3 1 001aab348 006aaa149 SOT54 variant 1emitter 3 2base 3 collector 1 2 2 3 1 001aab447 006aaa149 BC807 BC807W BC327 6 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 17 November 2009 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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