BC847BVN,115 Nexperia

BC847BVN NPN/PNP general purpose transistor 20 May 2019 Product data sheet 1. General description NPN/PNP transistor pair in a SOT666 plastic package. 2. Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced required PCB area Reduced pick and place costs. AEC-Q101 qualified 3. Applications General purpose switching and amplification Switch mode power supply complementary MOSFET driver Complementary driver for audio amplifiers. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 45 V CEO voltage I collector current - - 100 mA C I peak collector current single pulse t 1 ms - - 200 mA CM p h DC current gain V = 5 V I = 2 mA 200 - 450 FE CE CNexperia BC847BVN NPN/PNP general purpose transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C1 1 E1 emitter TR1 6 5 4 B2 E2 2 B1 base TR1 TR2 3 C2 collector TR2 TR1 4 E2 emitter TR2 1 2 3 E1 B1 C2 5 B2 base TR2 sym019 SOT666 6 C1 collector TR1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC847BVN SOT666 plastic, surface-mounted package 6 leads 0.5 mm pitch 1.6 SOT666 mm x 1.2 mm x 0.55 mm body 7. Marking Table 4. Marking codes Type number Marking code BC847BVN 13 BC847BVN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 20 May 2019 2 / 11