X-On Electronics has gained recognition as a prominent supplier of BC847CW,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847CW,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847CW,135 Nexperia

BC847CW,135 electronic component of Nexperia
BC847CW,135 Nexperia
BC847CW,135 Bipolar Transistors - BJT
BC847CW,135  Semiconductors

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See Product Specifications
Part No. BC847CW,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 200 mW Surface Mount SOT-323
Datasheet: BC847CW,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1375 ea
Line Total: USD 0.14 
Availability - 55131
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6867
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ : 20
Multiples : 20
20 : USD 0.056
200 : USD 0.0442
600 : USD 0.0282
2000 : USD 0.0227
10000 : USD 0.0204
20000 : USD 0.0192

55131
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.1375
10 : USD 0.085
100 : USD 0.0537
500 : USD 0.0348
1000 : USD 0.0253
2500 : USD 0.0231
5000 : USD 0.0187
10000 : USD 0.0154
20000 : USD 0.0154

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BC847CW,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847CW,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 12 24 October 2019 Product data sheet 1. Product profile 1.1. General description NPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) or ultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number 1 Package PNP complement Nexperia JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847W SOT323 SC-70 - BC857W BC847AW BC857AW BC847BW BC857BW BC847CW BC857CW BC847AM SOT883 SC-101 - BC857AM BC847BM BC857BM BC847CM BC857CM 1 Valid for all available selection groups. 1.2. Features and benefits General-purpose transistors SMD plastic packages Three different gain selections AEC-Q101 qualified 1.3. Applications General-purpose switching and amplificationNexperia BC847 series 45 V, 100 mA NPN general-purpose transistors 1.4. Quick reference data Table 2. Quick reference data T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 45 V CEO I collector current - - 100 mA C h DC current gain V = 5 V 110 - 800 FE CE I = 2 mA C h group A 110 180 220 FE h group B 200 290 450 FE h group C 420 520 800 FE 2. Pinning information Table 3. Pinning information Pin Symbol Descrition Simlified outline Graphic symbol SOT23 SOT323 3 1 B base C 2 E emitter B 3 C collector E sym123 1 2 SOT883 1 B base C 1 3 2 E emitter 2 B 3 C collector Transparent top view E sym123 BC847 SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet Rev. 12 24 October 2019 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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