BC850BW Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 NPN transistor in a SOT323 plastic package. handbook, halfpage PNP complements: BC859W and BC860W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 (1) (1) NUMBER CODE NUMBER CODE 1 2 BC849BW 2B BC850BW 2F Top view MAM062 BC849CW 2C BC850CW 2G Note 1. = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC849W 30 V BC850W 50 V V collector-emitter voltage open base CEO BC849W 30 V BC850W 45 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 200 mA BM P total power dissipation T 25 C note 1 200 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2