X-On Electronics has gained recognition as a prominent supplier of BC857B,235 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857B,235 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857B,235 Nexperia

BC857B,235 electronic component of Nexperia
BC857B,235 Nexperia
BC857B,235 Bipolar Transistors - BJT
BC857B,235  Semiconductors

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See Product Specifications
Part No. BC857B,235
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 250 mW Surface Mount TO-236AB
Datasheet: BC857B,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30000: USD 0.0088 ea
Line Total: USD 264 
Availability - 58200
Ship by Mon. 19 May to Fri. 23 May
MOQ: 30000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
58200
Ship by Mon. 19 May to Fri. 23 May
MOQ : 30000
Multiples : 10000
30000 : USD 0.0088

63828
Ship by Mon. 19 May to Fri. 23 May
MOQ : 2004
Multiples : 1
2004 : USD 0.1297
3396 : USD 0.0765
5420 : USD 0.0479
7435 : USD 0.035
9524 : USD 0.0273
10000 : USD 0.026
11111 : USD 0.0234
13333 : USD 0.0195

57200
Ship by Mon. 19 May to Fri. 23 May
MOQ : 23810
Multiples : 1
23810 : USD 0.0109

853
Ship by Mon. 26 May to Thu. 29 May
MOQ : 20
Multiples : 20
20 : USD 0.046
200 : USD 0.0362
600 : USD 0.0308
2000 : USD 0.0186
10000 : USD 0.0169
20000 : USD 0.0158

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
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Taric
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We are delighted to provide the BC857B,235 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857B,235 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856 BC857 BC858 65 V, 100 mA PNP general-purpose transistors Rev. 7 16 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number Package NPN complement Nexperia JEDEC BC856 SOT23 TO-236AB BC846 BC856A BC846A BC856B BC846B BC857 BC847 BC857A BC847A BC857B BC847B BC857C BC847C BC858B BC848B 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) AEC-Q101 qualified 1.3 Applications General-purpose switching and amplificationNexperia BC856 BC857 BC858 65 V, 100 mA PNP general-purpose transistors 1.4 Quick reference data Table 2.Quick reference data T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base CEO BC856 - - -65 V BC857 - - -45 V BC858B - - -30 V I collector current - - -100 mA C I peak collector current - - -200 mA CM h DC current gain V = -5 V I = -2 mA FE CE C BC856 125 - 475 - BC857 125 - 800 - BC856A BC857A 125 - 250 - BC856 BC857B BC858B 220 - 475 - BC857C 420 - 800 - 2 Pinning information Table 3.Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter 3 C collector B E sym132 1 2 BC856 BC857 BC858 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved. Product data sheet Rev. 7 16 April 2018 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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