X-On Electronics has gained recognition as a prominent supplier of BCM856DS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCM856DS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCM856DS,115 Nexperia

BCM856DS,115 electronic component of Nexperia
BCM856DS,115 Nexperia
BCM856DS,115 Bipolar Transistors - BJT
BCM856DS,115  Semiconductors

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See Product Specifications
Part No. BCM856DS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT COMPLEX DISCRETE S2023D/SOT45
Datasheet: BCM856DS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1315 ea
Line Total: USD 394.5 
Availability - 5820
Ship by Mon. 21 Jul to Fri. 25 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
37574
Ship by Thu. 17 Jul to Mon. 21 Jul
MOQ : 1
Multiples : 1
1 : USD 0.5175
10 : USD 0.32
100 : USD 0.1956
500 : USD 0.1375
1000 : USD 0.1254
3000 : USD 0.1111
6000 : USD 0.1012
9000 : USD 0.0935
24000 : USD 0.0924

3225
Ship by Thu. 17 Jul to Mon. 21 Jul
MOQ : 1
Multiples : 1
1 : USD 0.644
10 : USD 0.3584
100 : USD 0.238
109 : USD 0.1778
298 : USD 0.168
1000 : USD 0.1666
3000 : USD 0.161

5820
Ship by Mon. 21 Jul to Fri. 25 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1315
6000 : USD 0.1236
9000 : USD 0.089

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BCM856DS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCM856DS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product prole 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package conguration Nexperia JEITA BCM856BS SOT363 SC-88 very small BCM856BS/DG BCM856DS SOT457 SC-74 small BCM856DS/DG 1.2 Features n Current gain matching n Base-emitter voltage matching n Drop-in replacement for standard double transistors n AEC-Q101 qualied 1.3 Applications n Current mirror n Differential amplier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - -65 V CEO I collector current - - -100 mA C h DC current gain V = -5V 200 290 450 FE CE I = -2mA CBCM856BS BCM856DS Nexperia PNP/PNP matched double transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Per device 1 h /h h matching V = 5V- 0.9 1 - FE1 FE2 FE CE I =2m- A C 2 V V- V matching V = -5V --2 mV BE1 BE2 BE CE I = -2mA C 1 The smaller of the two values is taken as the numerator. 2 The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 5 base TR2 1 2 3 1 2 3 6 collector TR1 001aab555 sym018 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCM856BS SC-88 plastic surface-mounted package 6 leads SOT363 BCM856BS/DG BCM856DS SC-74 plastic surface-mounted package (TSOP6) 6 leads SOT457 BCM856DS/DG BCM856BS BCM856DS 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 7 August 2008 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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