BCP53-10 Nexperia

BCP53-10 electronic component of Nexperia
BCP53-10 Nexperia
BCP53-10 Bipolar Transistors - BJT
BCP53-10  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCP53-10 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP53-10 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCP53-10
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, PNP, SOT-223
Datasheet: BCP53-10 Datasheet (PDF)
Price (USD)
50: USD 0.1697 ea
Line Total: USD 8.48 
Availability : 0
  
QtyUnit Price
50$ 0.1697
200$ 0.1608
500$ 0.1574

Availability 0
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 50
Multiples : 1
QtyUnit Price
50$ 0.1697
200$ 0.1608
500$ 0.1574

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Product Range
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Voltage Vcbo
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AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat (BISS) transistors Rev. 01.00 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low V , PBSS, power transistors CEsat Abstract This application note provides information on how to make use of a cost saving opportunity by replacing older medium power and power transistors by Philips low V (BISS) transistors. A cross reference CEsat table provides a cross reference for leaded and SMD types. Further spreadsheets show a comparison of the most common parameters (V , I , V and h ). CEO C CEsat FE AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Revision history Rev Date Description 01 20060106 Initial document Contact information For additional information, please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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