X-On Electronics has gained recognition as a prominent supplier of BCP56-10HX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP56-10HX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP56-10HX Nexperia

BCP56-10HX electronic component of Nexperia
BCP56-10HX Nexperia
BCP56-10HX Bipolar Transistors - BJT
BCP56-10HX  Semiconductors

Images are for reference only
See Product Specifications
Part No. BCP56-10HX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 80 V, 1 A NPN md power transistors
Datasheet: BCP56-10HX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1437: USD 0.1809 ea
Line Total: USD 259.95 
Availability - 10660
Ship by Thu. 24 Jul to Wed. 30 Jul
MOQ: 1437  Multiples: 1
Pack Size: 1
Availability Price Quantity
10660
Ship by Thu. 24 Jul to Wed. 30 Jul
MOQ : 1437
Multiples : 1
1437 : USD 0.1809
5572 : USD 0.0467
6007 : USD 0.0433

3884
Ship by Thu. 31 Jul to Tue. 05 Aug
MOQ : 5
Multiples : 5
5 : USD 0.2028
50 : USD 0.1766
150 : USD 0.124
1000 : USD 0.1021
2000 : USD 0.098
5000 : USD 0.0954

58016
Ship by Tue. 22 Jul to Thu. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4225
10 : USD 0.26
100 : USD 0.1656
500 : USD 0.1188
1000 : USD 0.0836
2000 : USD 0.0759
5000 : USD 0.0715

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCP56-10HX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP56-10HX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP56H series 80 V, 1 A NPN medium power transistors Rev. 1 23 November 2016 Product data sheet 1. Product profile 1.1 General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEITA JEDEC BCP56H SOT223 SC-73 - BCP53H BCP56-10H BCP53-10H BCP56-16H BCP53-16H 1.2 Features and benefits High collector current capability I and I C CM Three current gain selections High power dissipation capability High-temperature applications up to 175 C AEC-Q101 qualified 1.3 Applications Linear voltage regulators MOSFET drivers Low-side switches Power management Amplifiers 1.4 Quick reference data Table 2. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 80 V CEO I collector current - - 1 A C I peak collector current single pulse t 1ms - - 2 A CM pBCP56H series Nexperia 80 V, 1 A NPN medium power transistors Table 2. Quick reference data continued T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit 1 h DC current gain V =2V I =150 mA 63 - 250 FE CE C 1 BCP56-10H V =2V I =150 mA 63 - 160 CE C 1 BCP56-16H V =2V I =150 mA 100 - 250 CE C 1 Pulse test: t 300 s =0.02 p 2. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Graphic symbol 1B base 4 C 2 C collector 3 E emitter B 4 C collector 132 E sym123 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCP56H SC-73 plastic surface-mounted package with increased SOT223 heatsink 4 leads BCP56-10H BCP56-16H 4. Marking Table 5. Marking codes Type number Marking code BCP56H BCP56H BCP56-10H P5610H BCP56-16H P5616H BCP56H SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved. Product data sheet Rev. 1 23 November 2016 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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