BCW32 BCW32 NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3 currents to 300mA. Sourced from process 10. 2 SOT-23 1 Mark: D2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 32 V CEO V Collector-Base Voltage 32 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector current (DC) 500 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Base Breakdown Voltage I = 2.0mA, I = 0 32 V (BR)CBO C B V Collector-Emitter Breakdown Voltage I = 10 A, I = 0 32 V (BR)CEO C B V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V (BR)EBO C C I Collector Cutoff Current V = 32V, I = 0 100 nA CBO CB E V = 32V, I = 0, T = 100C 10 A CB E A On Characteristics h DC Current Gain I = 2.0mA, V = 5.0V 200 450 FE C CE V Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.25 V CE(sat) C B V Base-Emitter On Voltage I = 2.0mA, V = 5.0V 0.55 0.7 V BE(on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 2.0mA, V = 5.0V 200 T C CE f = 35MHz C Output Capacitance V = 10V, I = 0, f = 1.0MHz 4.0 pF obo CB E NF Noise Figure I = 0.2mA, V = 5.0V 10 dB C CE R = 2.0k , f = 1.0kHz S B = 200Hz W Thermal Characteristics T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25C 2.8 mW/C R Thermal Resistance, Junction to Ambient 357 C/W JA Device mounted on FR-4PCB 40mm 40mm 1.5mm 2002 Fairchild Semiconductor Corporation Rev. A, August 2002BCW32 Typical Characteristics 0.4 400 Vce = 5V 125 C = 10 300 0.3 25 C 25 C 200 0.2 - 40 C 125 C 100 0.1 - 40 C 0 10 20 30 50 100 200 300 500 1 10 100 400 I - COLLECTOR CURRENT (mA) C I - COLLECTOR CURRENT (mA) C Figure 1. Typical Pulsed Current Gain vs Figure 2. Collector-Emitter Saturation Voltage Collector Current vs Collector Current 1 1 C - 40 C - 40 0.8 0.8 25 C C 0.6 0.6 25 125 C 125 C 0.4 0.4 = 10 V = 5V CE 0.2 0.2 0.1 1 10 100 300 1 10 100 500 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs Collector Current vs Collector Current 100 10 f = 1.0 MHz V = 60V CB 10 Cib 1 Cob 1 0.1 0.1 0.1 1 10 100 25 50 75 100 125 150 V - COLLECTOR VOLTAGE (V) ce T A- AMBIENT TEMPERATURE ( C) Figure 5. Collector-Cutoff Current Figure 6. Input and Outtput Capacitance vs Ambient Temperature vs Reverse Voltage 2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FE BESAT CBO CESAT BEON I - COLLECTOR CURRENT (nA) V - COLLECTOR-EMITTER VOLTAGE (V) h - TYPICAL PULSED CURRENT GAIN V - BASE-EMITTER ON VOLTAGE (V) V - COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (pF)