BCX52,115 Nexperia

BCX52,115 electronic component of Nexperia
BCX52,115 Nexperia
BCX52,115 Bipolar Transistors - BJT
BCX52,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCX52,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX52,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCX52,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 60 V 1 A 145MHz 500 mW Surface Mount SOT-89
Datasheet: BCX52,115 Datasheet (PDF)
Price (USD)
1: USD 0.4438 ea
Line Total: USD 0.44 
Availability : 3684
  
Ship by Wed. 27 Aug to Fri. 29 Aug
QtyUnit Price
1$ 0.4438
10$ 0.2763
100$ 0.1668
500$ 0.1166
1000$ 0.0902
2000$ 0.0814
5000$ 0.0704
10000$ 0.0616
25000$ 0.0583

Availability 3684
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4438
10$ 0.2763
100$ 0.1668
500$ 0.1166
1000$ 0.0902
2000$ 0.0814
5000$ 0.0704
10000$ 0.0616
25000$ 0.0583


Availability 31040
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5837
Multiples : 1
QtyUnit Price
5837$ 0.0804
10000$ 0.0716
100000$ 0.06


Availability 29100
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5837
Multiples : 1
QtyUnit Price
5837$ 0.0804
10000$ 0.0716
100000$ 0.06


Availability 5820
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 3000
Multiples : 1000
QtyUnit Price
3000$ 0.108
4000$ 0.0677


Availability 82450
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5837
Multiples : 1
QtyUnit Price
5837$ 0.0804
10000$ 0.0716
100000$ 0.06

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCX52,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX52,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP52 BCX52 BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 18 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP52 SOT223 SC-73 - BCP55 BCX52 SOT89 SC-62 TO-243 BCX55 BC52PA SOT1061 - - BC55PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 60 V V CEO collector current - - 1A I C peak collector current single pulse t 1ms - - 2A I CM pBCP52 BCX52 BC52PA Nexperia 60 V, 1 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain V = 2V 63 - 250 FE CE I = 150 mA C h selection -10 V = 2V 63 - 160 FE CE I = 150 mA C h selection -16 V = 2V 100 - 250 FE CE I = 150 mA C 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP52 BCX52 BC52PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 9 18 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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