BCX53,115 Nexperia

BCX53,115 electronic component of Nexperia
BCX53,115 Nexperia
BCX53,115 Bipolar Transistors - BJT
BCX53,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCX53,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX53,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCX53,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS MED PWR TAPE-7
Datasheet: BCX53,115 Datasheet (PDF)
Price (USD)
2992: USD 0.1567 ea
Line Total: USD 468.85 
Availability : 2910
  
Ship by Tue. 25 Nov to Mon. 01 Dec
QtyUnit Price
2992$ 0.1567
10000$ 0.1397
100000$ 0.117

Availability 64
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4963
10$ 0.3475
50$ 0.2124
100$ 0.1896
1000$ 0.121


Availability 33
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2798
50$ 0.2388
150$ 0.1637
1000$ 0.1369
2000$ 0.1285
5000$ 0.1244


Availability 120
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.98
10$ 0.5642
100$ 0.4172


Availability 2910
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 2992
Multiples : 1
QtyUnit Price
2992$ 0.1567
10000$ 0.1397
100000$ 0.117


Availability 4850
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 2992
Multiples : 1
QtyUnit Price
2992$ 0.1567
10000$ 0.1397
100000$ 0.117

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCX53,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX53,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP53 BCX53 BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 BC53PA SOT1061 - - BC56PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 80 V V CEO collector current - - 1A I C peak collector current single pulse t 1ms - - 2A I CM pBCP53 BCX53 BC53PA Nexperia 80 V, 1 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain V = 2V 63 - 250 FE CE I = 150 mA C h selection -10 V = 2V 63 - 160 FE CE I = 150 mA C h selection -16 V = 2V 100 - 250 FE CE I = 150 mA C 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP53 BCX53 BC53PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 9 19 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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