PBHV9414ZX Nexperia

PBHV9414ZX electronic component of Nexperia
PBHV9414ZX Nexperia
PBHV9414ZX Bipolar Transistors - BJT
PBHV9414ZX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBHV9414ZX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV9414ZX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBHV9414ZX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 140V 4A PNP high vltg low VCEsat tran
Datasheet: PBHV9414ZX Datasheet (PDF)
Price (USD)
1: USD 0.9041 ea
Line Total: USD 0.9 
Availability : 396
  
Ship by Tue. 23 Sep to Thu. 25 Sep
QtyUnit Price
1$ 0.9041
10$ 0.5636
100$ 0.3394
500$ 0.2565
1000$ 0.2326
2000$ 0.2054
5000$ 0.1884
10000$ 0.1839
25000$ 0.1771

Availability 396
Ship by Tue. 23 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9041
10$ 0.5636
100$ 0.3394
500$ 0.2565
1000$ 0.2326
2000$ 0.2054
5000$ 0.1884
10000$ 0.1839
25000$ 0.1771

   
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We are delighted to provide the PBHV9414ZX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV9414ZX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBHV9414Z 140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor 24 January 2014 Product data sheet 1. General description PNP high-voltage low V Breakthrough Small Signal (BISS) transistor in a medium CEsat power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C AEC-Q101 qualified 3. Applications LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -140 V CEO voltage I collector current - - -4 A C I peak collector current single pulse t 1 ms - - -10 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 100 150 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBHV9414Z 140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym028 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV9414Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBHV9414Z V9414Z 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -180 V CBO V collector-emitter voltage open base - -140 V CEO V emitter-base voltage open collector - -7 V EBO I collector current - -4 A C I peak collector current single pulse t 1 ms - -10 A CM p I base current - -500 mA B P total power dissipation T 25 C 1 - 0.65 W tot amb 2 - 1 W 3 - 1.35 W T junction temperature - 150 C j PBHV9414Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 January 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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