PBSS2540MB,315 Nexperia

PBSS2540MB,315 electronic component of Nexperia
PBSS2540MB,315 Nexperia
PBSS2540MB,315 Bipolar Transistors - BJT
PBSS2540MB,315  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PBSS2540MB,315 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS2540MB,315 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS2540MB,315
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 40 V, 0.5 A NPN low VCEsat transistor
Datasheet: PBSS2540MB,315 Datasheet (PDF)
Price (USD)
1: USD 0.2638 ea
Line Total: USD 0.26 
Availability : 0
  
QtyUnit Price
1$ 0.2638
10$ 0.1625
100$ 0.0972
500$ 0.069
1000$ 0.0528
5000$ 0.0462
10000$ 0.0418
20000$ 0.0363

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0795
20000$ 0.0794
30000$ 0.0791
40000$ 0.079
50000$ 0.0789
100000$ 0.0787
200000$ 0.0786
250000$ 0.0784
500000$ 0.0782


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3998
10$ 0.3129
100$ 0.1663
500$ 0.1094
1000$ 0.0744
2000$ 0.0672
5000$ 0.0584


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3998
10$ 0.3129
100$ 0.1663
500$ 0.1094
1000$ 0.0744
2000$ 0.0672
5000$ 0.0584


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0517
30000$ 0.0467
50000$ 0.0438
100000$ 0.0388
250000$ 0.0379


Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2638
10$ 0.1625
100$ 0.0972
500$ 0.069
1000$ 0.0528
5000$ 0.0462
10000$ 0.0418
20000$ 0.0363


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0197
20000$ 0.0193
30000$ 0.0192
40000$ 0.019
50000$ 0.0186


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0398

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS2540MB,315 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS2540MB,315 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. 1.2 Features and benefits Leadless ultra small SMD plastic High efficiency due to less heat package generation Low package height of 0.37 mm AEC-Q101 qualified Low collector-emitter saturation Reduced Printed-Circuit Board (PCB) voltage V requirements CEsat High collector current capability I and C I CM 1.3 Applications DC-to-DC conversion LCD backlighting Supply line switching Drivers in low supply voltage applications (e.g. lamps and LEDs) Battery charger 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current - - 500 mA C I peak collector current single pulse t 1ms --1 A CM p R collector-emitter I =500 mA I = 50 mA pulsed - 380 500 m CEsat C B saturation resistance t 300 s 0.02 T =25C p ambPBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 1 2E emitter 3 3 C collector 2 1 Transparent 2 top view sym021 SOT883B (DFN1006B-3) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS2540MB DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS2540MB 0001 0010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PBSS2540MB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 4 April 2012 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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