PBSS302NX,115 Nexperia

PBSS302NX,115 electronic component of Nexperia
PBSS302NX,115 Nexperia
PBSS302NX,115 Bipolar Transistors - BJT
PBSS302NX,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS302NX,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS302NX,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS302NX,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 20 V 5.3 A 140MHz 2.1 W Surface Mount SOT-89
Datasheet: PBSS302NX,115 Datasheet (PDF)
Price (USD)
1225: USD 0.2123 ea
Line Total: USD 260.07 
Availability : 0
  
QtyUnit Price
1225$ 0.2123

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1225
Multiples : 1
QtyUnit Price
1225$ 0.2123


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2374
10$ 1.0549
100$ 0.8091
500$ 0.6396


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2374
10$ 1.0549
100$ 0.8091
500$ 0.6396


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.5306
2000$ 0.4637
5000$ 0.4525


Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5276
10$ 0.7775
100$ 0.4339
500$ 0.3428
1000$ 0.2734
2000$ 0.2496
10000$ 0.2475
25000$ 0.2351


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 36
Multiples : 1
QtyUnit Price
36$ 0.1827


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4745


Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1222
5$ 0.863
25$ 0.6052
40$ 0.3962
109$ 0.3745

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS302NX,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS302NX,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT89 CEsat (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 5.3 A C I peak collector current single pulse - - 10.6 A CM t 1ms p 1 R collector-emitter I =4A -28 40 m CEsat C saturation resistance I =200 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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