PBSS302NZ,135 Nexperia

PBSS302NZ,135 electronic component of Nexperia
PBSS302NZ,135 Nexperia
PBSS302NZ,135 Bipolar Transistors - BJT
PBSS302NZ,135  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS302NZ,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS302NZ,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS302NZ,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT NPN 20V 5.8A
Datasheet: PBSS302NZ,135 Datasheet (PDF)
Price (USD)
1: USD 1.0987 ea
Line Total: USD 1.1 
Availability : 0
  
QtyUnit Price
1$ 1.0987
10$ 0.6737
100$ 0.3993
500$ 0.3212
1000$ 0.2959
2000$ 0.2717
4000$ 0.2453
8000$ 0.2321

Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.3605
8000$ 0.3569
12000$ 0.3532
20000$ 0.3498
24000$ 0.3462
40000$ 0.3427
100000$ 0.3394
200000$ 0.336
500000$ 0.3326


Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7305
10$ 0.645
100$ 0.5046
500$ 0.408
1000$ 0.3351


Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.859
10$ 0.6937
100$ 0.4758
500$ 0.3784
1000$ 0.344


Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.1354


Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 32
Multiples : 1
QtyUnit Price
32$ 1.0525


Availability 0
Ship by Fri. 07 Nov to Tue. 11 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0987
10$ 0.6737
100$ 0.3993
500$ 0.3212
1000$ 0.2959
2000$ 0.2717
4000$ 0.2453
8000$ 0.2321


Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.2848

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS302NZ,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS302NZ,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS302NZ 20 V, 5.8 A NPN low V (BISS) transistor CEsat Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 5.8 A C I peak collector current single pulse --11.6 A CM t 1ms p 1 R collector-emitter I =4A -30 43 m CEsat C saturation resistance I =200 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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