PBSS3515MB,315 Nexperia

PBSS3515MB,315 electronic component of Nexperia
PBSS3515MB,315 Nexperia
PBSS3515MB,315 Bipolar Transistors - BJT
PBSS3515MB,315  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PBSS3515MB,315 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS3515MB,315 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS3515MB,315
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 15 V, 0.5 A PNP low VCEsat transistor
Datasheet: PBSS3515MB,315 Datasheet (PDF)
Price (USD)
1: USD 0.2638 ea
Line Total: USD 0.26 
Availability : 0
  
QtyUnit Price
1$ 0.2638
10$ 0.1637
100$ 0.0984
500$ 0.069
1000$ 0.0594
2500$ 0.0539
5000$ 0.0484
10000$ 0.0473
20000$ 0.0429

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0554
20000$ 0.0552
30000$ 0.0546
40000$ 0.0541
50000$ 0.0535
100000$ 0.053
150000$ 0.0525
250000$ 0.052
500000$ 0.0514


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3998
10$ 0.3164
100$ 0.1681
500$ 0.1106
1000$ 0.0752
2000$ 0.0678
5000$ 0.059


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3998
10$ 0.3164
100$ 0.1681
500$ 0.1106
1000$ 0.0752
2000$ 0.0678
5000$ 0.059


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0517
30000$ 0.0467
50000$ 0.0438
100000$ 0.0388
250000$ 0.0379


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2638
10$ 0.1637
100$ 0.0984
500$ 0.069
1000$ 0.0594
2500$ 0.0539
5000$ 0.0484
10000$ 0.0473
20000$ 0.0429


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 10000
Multiples : 1
QtyUnit Price
10000$ 0.0272
20000$ 0.0257
40000$ 0.0251
60000$ 0.0246
80000$ 0.0243
100000$ 0.0238
1000000$ 0.0234
2500000$ 0.0231
5000000$ 0.0227

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS3515MB,315 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS3515MB,315 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High efficiency due to less heat package generation Low package height of 0.37 mm AEC-Q101 qualified Low collector-emitter saturation Reduced Printed-Circuit Board (PCB) voltage V requirements CEsat High collector current capability I and C I CM 1.3 Applications DC-to-DC conversion LCD backlighting Supply line switching Driver in low supply voltage applications (e.g. lamps and LEDs) Battery charger 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -15 V CEO voltage I collector current - - -500 mA C I peak collector current single pulse t 1ms ---1 A CM p R collector-emitter I =-500mA I = -50 mA pulsed - - 500 m CEsat C B saturation resistance t 300 s 0.02 T =25C p ambPBSS3515MB Nexperia 15 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 1 2E emitter 3 3 C collector 2 1 Transparent 2 top view sym013 SOT883B 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS3515MB - Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS3515MB 0001 0011 1 For SOT883B binary marking code description see Figure 1 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. SOT883B binary marking code decription PBSS3515MB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 6 March 2012 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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