PBSS4032NZ,115 Nexperia

PBSS4032NZ,115 electronic component of Nexperia
PBSS4032NZ,115 Nexperia
PBSS4032NZ,115 Bipolar Transistors - BJT
PBSS4032NZ,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS4032NZ,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4032NZ,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS4032NZ,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT Single NPN 30V 4.9A 700mW 145MHz
Datasheet: PBSS4032NZ,115 Datasheet (PDF)
Price (USD)
1: USD 1.0563 ea
Line Total: USD 1.06 
Availability : 0
  
QtyUnit Price
1$ 1.0563
10$ 0.7188
100$ 0.4455
500$ 0.3553
1000$ 0.2816
2000$ 0.2739
25000$ 0.2629

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.5741
2000$ 0.5725
3000$ 0.5708
4000$ 0.4566
5000$ 0.3836
6000$ 0.3325
10000$ 0.2878


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.3687
2000$ 0.3386
5000$ 0.3186
10000$ 0.3152


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8204
10$ 0.7316
100$ 0.572
500$ 0.4624


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.876
10$ 0.6994
100$ 0.5053
500$ 0.4218
1000$ 0.3857


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 41
Multiples : 1
QtyUnit Price
41$ 0.8168


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0563
10$ 0.7188
100$ 0.4455
500$ 0.3553
1000$ 0.2816
2000$ 0.2739
25000$ 0.2629


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7488
10$ 1.425
30$ 0.9485
100$ 0.7452
500$ 0.6798
1000$ 0.6464

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4032NZ,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4032NZ,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4032NZ 30 V, 4.9 A NPN low V (BISS) transistor CEsat Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 4.9 A C I peak collector current single pulse -- 10 A CM t 1ms p 1 R collector-emitter I =4A -45 62.5 m CEsat C saturation resistance I =400 mA B 1 Pulse test: t 300 s 0.02. pPBSS4032NZ Nexperia 30 V, 4.9 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032NZ SC-73 plastic surface-mounted package with increased SOT223 heat sink 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS4032NZ PB4032NZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 4.9 A C I peak collector current single pulse -10 A CM t 1ms p I base current - 1 A B PBSS4032NZ 1 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 31 March 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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