PBSS4160PANSX Nexperia

PBSS4160PANSX electronic component of Nexperia
PBSS4160PANSX Nexperia
PBSS4160PANSX Bipolar Transistors - BJT
PBSS4160PANSX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS4160PANSX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4160PANSX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS4160PANSX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 60V 1A NPNNPN
Datasheet: PBSS4160PANSX Datasheet (PDF)
Price (USD)
1: USD 0.8025 ea
Line Total: USD 0.8 
Availability : 0
  
QtyUnit Price
1$ 0.8025
10$ 0.4963
100$ 0.299
500$ 0.2244
1000$ 0.2046
3000$ 0.2046

Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.341
6000$ 0.3401
9000$ 0.3393
12000$ 0.3384
15000$ 0.3375
24000$ 0.3365
30000$ 0.3356
60000$ 0.3347
120000$ 0.3338


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 0.7348
10$ 0.516
100$ 0.3898
500$ 0.3038
1000$ 0.2179


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7552
10$ 0.7388
30$ 0.546
100$ 0.484


Availability 0
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8025
10$ 0.4963
100$ 0.299
500$ 0.2244
1000$ 0.2046
3000$ 0.2046


Availability 0
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 0.4016
25$ 0.3609
58$ 0.2727
158$ 0.2578

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4160PANSX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4160PANSX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 60 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 1.5 A CM pNexperia PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit Per transistor R collector-emitter I = 0.5 A I = 50 mA pulsed - - 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym140 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160PANS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and small SOT1118D outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4160PANS 3F PBSS4160PANS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 February 2015 2 / 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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