X-On Electronics has gained recognition as a prominent supplier of PBSS4330PA,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4330PA,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4330PA,115 Nexperia

PBSS4330PA,115 electronic component of Nexperia
PBSS4330PA,115 Nexperia
PBSS4330PA,115 Bipolar Transistors - BJT
PBSS4330PA,115  Semiconductors

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See Product Specifications
Part No. PBSS4330PA,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 3 A 210MHz 2.1 W Surface Mount 3-HUSON (2x2)
Datasheet: PBSS4330PA,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6984 ea
Line Total: USD 0.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1528
6000 : USD 0.1498
9000 : USD 0.1362
15000 : USD 0.1356
21000 : USD 0.1348

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6543
10 : USD 0.5141
100 : USD 0.3502
500 : USD 0.2626
1000 : USD 0.197

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6543
10 : USD 0.5141
100 : USD 0.3502
500 : USD 0.2626
1000 : USD 0.197

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1881
6000 : USD 0.1697
15000 : USD 0.1587
30000 : USD 0.1455
75000 : USD 0.1401

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 1
3000 : USD 0.1365
9000 : USD 0.1326

0
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 5
Multiples : 5
5 : USD 0.4923
50 : USD 0.3321
150 : USD 0.2643
500 : USD 0.221
3000 : USD 0.2017
6000 : USD 0.1902

0
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6984
10 : USD 0.4299
100 : USD 0.2082
1000 : USD 0.1738
3000 : USD 0.1409
9000 : USD 0.1295
24000 : USD 0.1273
45000 : USD 0.1227

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1382

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4330PA,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4330PA,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an CEsat ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 30 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 5 A CM p R collector-emitter I = 3 A I = 300 mA pulsed - 75 100 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym021 1 2 Transparent top view DFN2020-3 (SOT1061) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4330PA DFN2020-3 DFN2020-3: plastic thermal enhanced ultra thin small outline SOT1061 package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4330PA AH PBSS4330PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 April 2015 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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