PBSS4350Z,135 Nexperia

PBSS4350Z 50 V low VCEsat NPN transistor 26 June 2018 Product data sheet 1. General description NPN low V transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. CEsat 2. Features and benefits Low collector-emitter saturation voltage High collector current capability: I and I C CM High collector current gain (h ) at high I FE C Higher efficiency leading to less heat generation Reduced PCB area requirements compared to DPAK. AEC-Q101 qualified 3. Applications Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO). Peripheral drivers Driver in low supply voltage applications, e.g. lamps, LEDs Inductive load driver, e.g. relays, buzzers, motors. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 50 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 5 A CM p h DC current gain V = 2 V I = 500 mA T = 25 C 1 200 - - FE CE C amb R collector-emitter I = 2 A I = 200 mA T = 25 C 1 - 110 145 m CEsat C B amb saturation resistance 1 Pulse test: t 300 s 0.02 pNexperia PBSS4350Z 50 V low VCEsat NPN transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 4 2 C collector B 3 E emitter 1 2 3 E 4 C collector SC-73 (SOT223) sym123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4350Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS4350Z PB4350 PBSS4350Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 26 June 2018 2 / 12