PBSS4360XX Nexperia

PBSS4360X 60 V, 3 A NPN low VCEsat BISS transistor 9 June 2017 Product data sheet 1. General description NPN low V Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) CEsat flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360X 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 6 A CM p R collector-emitter I = 2 A I = 200 mA T = 25 C 1 - - 140 m CEsat C B amb saturation resistance 1 Pulse test: t 300 s 0.02 pNexperia PBSS4360X 60 V, 3 A NPN low VCEsat BISS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base 3 2 1 E SOT89 sym123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4360X SOT89 plastic, surface-mounted package 3 leads 1.5 mm pitch 4.5 SOT89 mm x 2.5 mm x 1.5 mm body 7. Marking Table 4. Marking codes Type number Marking code PBSS4360X S40 PBSS4360X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 9 June 2017 2 / 13