X-On Electronics has gained recognition as a prominent supplier of PBSS4360ZX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4360ZX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4360ZX Nexperia

PBSS4360ZX electronic component of Nexperia
PBSS4360ZX Nexperia
PBSS4360ZX Bipolar Transistors - BJT
PBSS4360ZX  Semiconductors

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See Product Specifications
Part No. PBSS4360ZX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 3 A 145MHz 650 mW Surface Mount SOT-223
Datasheet: PBSS4360ZX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6107 ea
Line Total: USD 0.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
203
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4808
50 : USD 0.3826
150 : USD 0.2299
1000 : USD 0.1944
2000 : USD 0.1786
5000 : USD 0.1692

   
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We are delighted to provide the PBSS4360ZX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4360ZX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 26 February 2014 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360Z. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 3 A C I peak collector current t 1 ms single pulse - - 6 A CM p R collector-emitter I = 2 A I = 200 mA pulsed - - 140 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym016 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4360Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS4360Z P4360Z 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 80 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 7 V EBO I collector current - 3 A C I peak collector current t 1 ms single pulse - 6 A CM p I base current - 500 mA B I peak base current t 1 ms single pulse - 1 A BM p P total power dissipation 1 - 0.65 W tot 2 - 1 W 3 - 1.35 W PBSS4360Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 February 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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