X-On Electronics has gained recognition as a prominent supplier of PBSS5160QAZ bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PBSS5160QAZ bipolar transistors - bjt are a product manufactured by Nexperia. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PBSS5160QAZ Nexperia

PBSS5160QAZ electronic component of Nexperia
Images are for reference only
See Product Specifications
Part No.PBSS5160QAZ
Manufacturer: Nexperia
Category:Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 60 V, 1A PNP low VCE sat (BISS) transi
Datasheet: PBSS5160QAZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.437 ea
Line Total: USD 0.44

Availability - 3379
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5543 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1463
50 : USD 0.1279
150 : USD 0.12
500 : USD 0.1103
2500 : USD 0.097
5000 : USD 0.0945

3379 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.437
10 : USD 0.3128
100 : USD 0.1414
1000 : USD 0.1035
5000 : USD 0.1012
10000 : USD 0.0909
25000 : USD 0.0863
50000 : USD 0.0828
100000 : USD 0.0794

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS5160QAZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5160QAZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

PBSS5160QA 60 V, 1 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -1 A C I peak collector current t 1 ms pulsed - - -1.5 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 225 330 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5160QA 60 V, 1 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E sym132 4 C collector 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5160QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS5160QA 10 10 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS5160QA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 23 August 2013 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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