PBSS5240ZF Nexperia

PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 15 October 2014 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -2 A C I peak collector current t 1 ms single pulse - - -3 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - - 320 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym028 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5240Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS5240Z S5240Z PBSS5240Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 October 2014 2 / 14