PBSS5260QAZ Nexperia

PBSS5260QAZ electronic component of Nexperia
PBSS5260QAZ Nexperia
PBSS5260QAZ Bipolar Transistors - BJT
PBSS5260QAZ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS5260QAZ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5260QAZ Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS5260QAZ
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 60 V 1.7 A 150MHz 325 mW Surface Mount DFN1010D-3
Datasheet: PBSS5260QAZ Datasheet (PDF)
Price (USD)
1: USD 0.5175 ea
Line Total: USD 0.52 
Availability : 0
  
QtyUnit Price
1$ 0.5175
10$ 0.3188
100$ 0.1944
500$ 0.1375
1000$ 0.1122
5000$ 0.1001
10000$ 0.0924

Availability 19
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2844
50$ 0.2508
150$ 0.1773
500$ 0.1474
2500$ 0.1421
5000$ 0.1388

   
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We are delighted to provide the PBSS5260QAZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5260QAZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -1.7 A C I peak collector current t 1 ms pulsed - - -2.5 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 195 280 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E sym132 4 C collector 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5260QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS5260QA 10 00 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS5260QA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 August 2013 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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