PHPT61002NYCLHX Nexperia

PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor 31 March 2017 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation 3. Applications Load switch Power management Linear mode voltage regulator Backlighting apllications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 100 V CEO voltage I collector current - - 2 A C I peak collector current single pulse t 1 ms - - 6 A CM p R collector-emitter I = 2 A I = 200 mA T = 25 C 1 - 80 150 m CEsat C B amb saturation resistance 1 pulsed tp 300 s 0.02Nexperia PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C mb 2 E emitter B 3 E emitter E 4 B base sym123 1 2 3 4 mb C collector LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61002NYCLH LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT61002NYCLH 1002NCC PHPT61002NYCLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 31 March 2017 2 / 15