X-On Electronics has gained recognition as a prominent supplier of PMBT3904M,315 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT3904M,315 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBT3904M,315 Nexperia

PMBT3904M,315 electronic component of Nexperia
PMBT3904M,315 Nexperia
PMBT3904M,315 Bipolar Transistors - BJT
PMBT3904M,315  Semiconductors

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See Product Specifications
Part No. PMBT3904M,315
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 590 mW Surface Mount SOT-883
Datasheet: PMBT3904M,315 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12422: USD 0.0209 ea
Line Total: USD 259.62 
Availability - 1094952
Ship by Fri. 16 May to Thu. 22 May
MOQ: 12422  Multiples: 1
Pack Size: 1
Availability Price Quantity
29235
Ship by Fri. 16 May to Thu. 22 May
MOQ : 9852
Multiples : 1
9852 : USD 0.0264

1094952
Ship by Fri. 16 May to Thu. 22 May
MOQ : 12422
Multiples : 1
12422 : USD 0.0209

834200
Ship by Fri. 16 May to Thu. 22 May
MOQ : 15152
Multiples : 1
15152 : USD 0.031
100000 : USD 0.026

38800
Ship by Fri. 16 May to Thu. 22 May
MOQ : 10000
Multiples : 10000
10000 : USD 0.0336
20000 : USD 0.0287

7391
Ship by Fri. 16 May to Thu. 22 May
MOQ : 6689
Multiples : 1
6689 : USD 0.0389
10000 : USD 0.0336
20000 : USD 0.0287

   
Manufacturer
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
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Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the PMBT3904M,315 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT3904M,315 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBT3904M 40 V, 200 mA NPN switching transistor 2 May 2019 Product data sheet 1. General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906M. 2. Features and benefits Single general-purpose switching transistor Board-space reduction Ultra small SMD plastic package 3. Applications General-purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current - - 200 mA C h DC current gain V = 1 V I = 10 mA 100 180 300 FE CE CNexperia PMBT3904M 40 V, 200 mA NPN switching transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 3 2 E emitter 2 B 3 C collector Transparent top view E DFN1006-3 (SOT883) sym021 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT3904M DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMBT3904M 6P PMBT3904M All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 2 May 2019 2 / 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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