PMBT3904YS,115 Nexperia

PMBT3904YS,115 electronic component of Nexperia
PMBT3904YS,115 Nexperia
PMBT3904YS,115 Bipolar Transistors - BJT
PMBT3904YS,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMBT3904YS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT3904YS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PMBT3904YS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT GENERAL PURPOSE TRANSISTOR
Datasheet: PMBT3904YS,115 Datasheet (PDF)
Price (USD)
1: USD 0.2213 ea
Line Total: USD 0.22 
Availability : 7049
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 0.2213
10$ 0.135
100$ 0.0816
500$ 0.0563
1000$ 0.0473
3000$ 0.0363
6000$ 0.0308
9000$ 0.0308
24000$ 0.0286

Availability 7049
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2213
10$ 0.135
100$ 0.0816
500$ 0.0563
1000$ 0.0473
3000$ 0.0363
6000$ 0.0308
9000$ 0.0308
24000$ 0.0286


Availability 77
Ship by Fri. 17 Oct to Thu. 23 Oct
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1128
100$ 0.0902
300$ 0.0592
3000$ 0.0476
6000$ 0.0431
9000$ 0.0408

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMBT3904YS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT3904YS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor 25 June 2019 Product data sheet 1. General description NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits General-purpose double transistor Board-space reduction 3. Applications General-purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 40 V CEO voltage I collector current - - 200 mA C h DC current gain V = 1 V I = 10 mA T = 25 C 100 180 300 FE CE C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C1 B2 E2 1 E1 emitter TR1 6 5 4 2 B1 base TR1 TR2 3 C2 collector TR2 TR1 4 E2 emitter TR2 1 2 3 E1 B1 C2 5 B2 base TR2 TSSOP6 (SOT363) sym020 6 C1 collector TR1Nexperia PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT3904YS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 PMBT3904YS BC% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse t 1 ms - 200 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 - 230 mW tot amb Per device P total power dissipation T 25 C 1 - 350 mW tot amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMBT3904YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 25 June 2019 2 / 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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