PMBT3946VPN,115 Nexperia

PMBT3946VPN,115 electronic component of Nexperia
PMBT3946VPN,115 Nexperia
PMBT3946VPN,115 Bipolar Transistors - BJT
PMBT3946VPN,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMBT3946VPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT3946VPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PMBT3946VPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT GENERAL PURPOSE TRANSISTOR
Datasheet: PMBT3946VPN,115 Datasheet (PDF)
Price (USD)
1: USD 1.015 ea
Line Total: USD 1.01 
Availability : 0
  
QtyUnit Price
1$ 1.015
10$ 0.7613
100$ 0.1731
500$ 0.1143
1000$ 0.0876
4000$ 0.0684

Availability 0
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 12000
Multiples : 12000
QtyUnit Price
12000$ 0.0781


Availability 0
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.015
10$ 0.7613
100$ 0.1731
500$ 0.1143
1000$ 0.0876
4000$ 0.0684


Availability 0
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2128
25$ 0.112
100$ 0.1008
225$ 0.0728
610$ 0.0686


Availability 0
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.079

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMBT3946VPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT3946VPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 31 August 2009 Product data sheet 1. Product prole 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and at lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA PMBT3946VPN SOT666 - PMBT3904VS PMBT3906VS 1.2 Features n Double general-purpose switching transistor n Board-space reduction n Ultra small and at lead SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter voltage open base - - 40 V CEO I collector current - - 200 mA C TR1 (NPN) h DC current gain V =1V 100 180 300 FE CE I =10mA C TR2 (PNP) h DC current gain V = - 1V 100 180 300 FE CE I = - 10 mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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