Product Information

PRMB11Z

PRMB11Z electronic component of Nexperia

Datasheet
Bipolar Transistors - BJT PRMB11/SOT1268 DFN1412-6

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0404 ea
Line Total: USD 0.04

21359 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8749 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

PRMB11Z
Nexperia

1 : USD 0.096
10 : USD 0.0575
100 : USD 0.0564
500 : USD 0.0509
1000 : USD 0.0433
2000 : USD 0.0425
5000 : USD 0.0398
10000 : USD 0.0372
25000 : USD 0.0341
50000 : USD 0.0335
100000 : USD 0.0335
125000 : USD 0.0335

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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PRMB11 50 V, 100 mA PNP/PNP Resistor-Equipped double Transistors (RET) 14 September 2018 Product data sheet 1. General description PNP/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11. NPN/PNP complement: PRMD3. 2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified 3. Applications Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -50 V CEO voltage I output current - - -100 mA O h DC current gain V = -5 V I = -5 mA T = 25 C 30 - - FE CE C amb R1 bias resistor 1 T = 25 C 1 7 10 13 k amb R2/R1 bias resistor ratio 1 0.8 1 1.2 1 See sectionTest informatio for resistor calculation and test conditions.Nexperia PRMB11 50 V, 100 mA PNP/PNP Resistor-Equipped double Transistors (RET) 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 GND1 GND (emitter) TR1 6 5 4 1 6 2 I1 input (base) TR1 7 R1 R2 3 O2 output (collector) TR2 2 5 TR2 4 GND2 GND (emitter) TR2 TR1 8 5 I2 input (base) TR2 3 4 R2 R1 6 O1 output (collector) TR1 Transparent top view 7 O1 output (collector) TR1 1 2 3 DFN1412-6 006aaa212 8 O2 output (collector) TR2 (SOT1268) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PRMB11 DFN1412-6 plastic thermal enhanced ultra thin small outline package no SOT1268 leads 6 terminals body: 1.4 mm x 1.2 mm x 0.47 mm 7. Marking Table 4. Marking codes Type number Marking code PRMB11 C5 PRMB11 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 14 September 2018 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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