Product Information

PRMD10Z

PRMD10Z electronic component of Nexperia

Datasheet
Bipolar Transistors - BJT PRMD10/SOT1268 DFN1412-6

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1663 ea
Line Total: USD 0.17

19400 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19400 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PRMD10Z
Nexperia

1 : USD 0.1663
10 : USD 0.0956
25 : USD 0.0948
50 : USD 0.0869
100 : USD 0.0636
250 : USD 0.0549
500 : USD 0.0435
1000 : USD 0.0359
3000 : USD 0.0351
6000 : USD 0.0351
15000 : USD 0.0351

3549 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

PRMD10Z
Nexperia

1 : USD 0.2921
10 : USD 0.1978
100 : USD 0.0816
1000 : USD 0.0644
5000 : USD 0.0529
10000 : USD 0.0403
25000 : USD 0.0391
50000 : USD 0.0391
100000 : USD 0.0379

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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PRMD10 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) 14 September 2018 Product data sheet 1. General description NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH10. 2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified 3. Applications Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor, for the PNP transistor with negative polarity V collector-emitter open base - - 50 V CEO voltage I output current - - 100 mA O h DC current gain V = 5 V I = 10 mA T = 25 C 100 - - FE CE C amb R1 bias resistor 1 T = 25 C 1 1.54 2.2 2.86 k amb R2/R1 bias resistor ratio 1 17 21 26 1 See sectionTest informatio for resistor calculation and test conditions.Nexperia PRMD10 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol O1 I2 GND2 1 GND1 GND (emitter) TR1 1 6 2 I1 input (base) TR1 7 3 O2 output (collector) TR2 R1 R2 2 5 4 GND2 GND (emitter) TR2 TR2 TR1 8 5 I2 input (base) TR2 3 4 R2 R1 6 O1 output (collector) TR1 Transparent top view 7 O1 output (collector) TR1 GND1 I1 O2 DFN1412-6 8 O2 output (collector) TR2 aaa-007379 (SOT1268) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PRMD10 DFN1412-6 plastic thermal enhanced ultra thin small outline package no SOT1268 leads 6 terminals body: 1.4 mm x 1.2 mm x 0.47 mm 7. Marking Table 4. Marking codes Type number Marking code PRMD10 B5 PRMD10 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 14 September 2018 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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