X-On Electronics has gained recognition as a prominent supplier of PUMX1,115 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PUMX1,115 bipolar transistors - bjt are a product manufactured by Nexperia. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PUMX1,115 Nexperia

PUMX1,115 electronic component of Nexperia
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See Product Specifications
Part No.PUMX1,115
Manufacturer: Nexperia
Category:Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Datasheet: PUMX1,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2231 ea
Line Total: USD 0.22

Availability - 10913
Ships to you between
Fri. 07 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10913 - WHS 1


Ships to you between Fri. 07 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2231
10 : USD 0.1518
100 : USD 0.0701
1000 : USD 0.0414
3000 : USD 0.0299
9000 : USD 0.0276
24000 : USD 0.0242
45000 : USD 0.023

29100 - WHS 2


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.0352
6000 : USD 0.0274
9000 : USD 0.0272
24000 : USD 0.0252
30000 : USD 0.0243

17460 - WHS 3


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 290
Multiples : 1
290 : USD 0.0878
500 : USD 0.085
1000 : USD 0.051

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the PUMX1,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PUMX1,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor Rev. 04 20 January 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor with two independently operating transistors in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement Nexperia JEITA PUMX1 SOT363 SC-88 PUMT1 PUMZ1 1.2 Features Double general-purpose transistor Board-space reduction Very small SMD plastic package 1.3 Applications General-purpose switching and amplification 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1emitterTR1 6 5 4 6 5 4 2baseTR1 3 collector TR2 TR2 TR1 4emitterTR2 132 5baseTR2 1 2 3 6 collector TR1 sym020PUMX1 Nexperia 40 V, 100 mA NPN general-purpose double transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PUMX1 SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code PUMX1 Z*Z 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 100 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM P total power dissipation T 25 C- 200 mW tot amb Per device 1 P total power dissipation T 25 C -300 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PUMX1 4 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 20 January 2010 2 of 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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