PXT2222A,115 Nexperia

PXT2222A,115 electronic component of Nexperia
PXT2222A,115 Nexperia
PXT2222A,115 Bipolar Transistors - BJT
PXT2222A,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PXT2222A,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PXT2222A,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PXT2222A,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN SW 40V 100MA
Datasheet: PXT2222A,115 Datasheet (PDF)
Price (USD)
1418: USD 0.3307 ea
Line Total: USD 468.93 
Availability : 37830
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
1418$ 0.3307
10000$ 0.2949
100000$ 0.247

Availability 1173564
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1418
Multiples : 1
QtyUnit Price
1418$ 0.3307
10000$ 0.2949
100000$ 0.247


Availability 47530
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1418
Multiples : 1
QtyUnit Price
1418$ 0.3307
10000$ 0.2949
100000$ 0.247


Availability 2328
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1418
Multiples : 1
QtyUnit Price
1418$ 0.3307
10000$ 0.2949
100000$ 0.247


Availability 37830
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1418
Multiples : 1
QtyUnit Price
1418$ 0.3307
10000$ 0.2949
100000$ 0.247

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PXT2222A,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PXT2222A,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface- Mounted Device (SMD) plastic package. PNP complement: PXT2907A 2. Features and benefits High current: max. 600 mA Low voltage: max. 40 V 3. Applications Switching and linear amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current - - 600 mA C h DC current gain V = 10 V I = 150 mA T = 25 C 100 - 300 FE CE C amb 0.02 t 300 s pulsed p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base 3 2 1 E SOT89 sym123Nexperia PXT2222A NPN switching transistors 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PXT2222A SOT89 plastic surface-mounted package die pad for good heat transfer SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code 1 PXT2222A %1P 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 600 mA C I peak collector current t 1 ms single pulse - 800 mA CM p I peak base current - 200 mA BM P total power dissipation T 25 C 1 - 0.5 W tot amb 2 - 0.8 W 3 - 1.1 W T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Transistor mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm . 2 3 Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm . PXT2222A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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