X-On Electronics has gained recognition as a prominent supplier of PXTA42,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PXTA42,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PXTA42,115 Nexperia

PXTA42,115 electronic component of Nexperia
PXTA42,115 Nexperia
PXTA42,115 Bipolar Transistors - BJT
PXTA42,115  Semiconductors

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See Product Specifications
Part No. PXTA42,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1.3 W Surface Mount SOT-89
Datasheet: PXTA42,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.182 ea
Line Total: USD 364 
Availability - 1940
Ship by Thu. 10 Jul to Wed. 16 Jul
MOQ: 2000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
1940
Ship by Thu. 10 Jul to Wed. 16 Jul
MOQ : 2000
Multiples : 1000
2000 : USD 0.182

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PXTA42,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PXTA42,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PXTA92. 1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead SMD plastic package 1.3 Applications Electronic ballast for fluorescent lighting LED driver for LED chain module High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 300 V CEO I collector current - - 100 mA C I peak collector current - - 200 mA CM h DC current gain V =10V 40 - - FE CE I =30mA CPXTA42 Nexperia 300 V, 100 mA NPN high-voltage transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1emitter 2 2 collector 3 3base 1 321 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PXTA42 SC-62 plastic surface-mounted package exposed die pad SOT89 for good heat transfer 3 leads 4. Marking Table 4. Marking codes 1 Type number Marking code PXTA42 *1D 1 * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 300 V CBO V collector-emitter voltage open base - 300 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current - 200 mA CM I peak base current - 100 mA BM 1 P total power dissipation T 25 C - 1300 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 collector 6 cm . PXTA42 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 5 11 July 2011 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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