PZT4403,115 Nexperia

PZT4403,115 electronic component of Nexperia
PZT4403,115 Nexperia
PZT4403,115 Bipolar Transistors - BJT
PZT4403,115  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PZT4403,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PZT4403,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.PZT4403,115
Manufacturer:Nexperia
Category:Bipolar Transistors - BJT
Description:Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.15 W Surface Mount SOT-223
Datasheet:PZT4403,115 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1000: USD 0.1053 ea
Line Total: USD 105.3 
Availability : 0
  
QtyUnit Price
1000$ 0.1053
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.1053


Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7125
10$ 0.4462
50$ 0.3096
100$ 0.2599
1000$ 0.1793


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1986
Multiples : 1
QtyUnit Price
1986$ 0.2467
10000$ 0.2201
100000$ 0.1842

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401. 1.2 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) 1.3 Applications Switching and linear amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Max Unit V collector-emitter voltage open base - - 40 V CEO I collector current - - 600 mA C 1 h DC current gain V = 1V 100 - 300 FE CE I = 150 mA C 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 4 2, 4 2, 4 collector 3emitter 1 132 3 sym028PZT4403 Nexperia 40 V, 600 mA PNP switching transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PZT4403 SC-73 plastic surface-mounted package with increased SOT223 heatsink 4 leads 4. Marking Table 4. Marking codes Type number Marking code PZT4403 ZT4403 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6V EBO I collector current - 600 mA C I peak collector current - 800 mA CM I peak base current - 200 mA BM 1 P total power dissipation T 25 C - 1150 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 collector 1 cm . 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from in free air -- 106 K/W th(j-a) junction to ambient R thermal resistance from -- 25 K/W th(j-sp) junction to solder point 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . PZT4403 3 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 2 March 2010 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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