2N3771 NTE

2N3771 electronic component of NTE
2N3771 NTE
2N3771 Bipolar Transistors - BJT
2N3771  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N3771 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3771 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N3771
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3
Datasheet: 2N3771 Datasheet (PDF)
Price (USD)
10: USD 7.1736 ea
Line Total: USD 71.74 
Availability : 54
  
Ship by Tue. 18 Nov to Mon. 24 Nov
QtyUnit Price
10$ 7.1736
50$ 5.04
100$ 4.9612
250$ 4.7381
500$ 4.4625
1000$ 4.3969
2500$ 4.2656
5000$ 4.1081

Availability 54
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 10
Multiples : 1
QtyUnit Price
10$ 7.1736
50$ 5.04
100$ 4.9612
250$ 4.7381
500$ 4.4625
1000$ 4.3969
2500$ 4.2656
5000$ 4.1081

   
Manufacturer
Product Category
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We are delighted to provide the 2N3771 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3771 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The NTE 2N3771 is a NPN silicon epitaxial-base transistor in a TO-3 package. It has a collector current rating of 30A and a voltage rating of 90V, and is suitable for use in general purpose switching and amplifier applications. It features a collector-to-emitter voltage of 65V, an emitter-to-base voltage of 6V, and a maximum power dissipation of 100W. It has an additional pin for heatsink mounting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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