We are the renowned NTE104 Bipolar Transistors - BJT suppliers in the USA, India, Europe, Australia, and beyond. NTE104 Bipolar Transistors - BJT is a manufacturer from NTE. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

NTE104

NTE104 electronic component of NTE
Images are for reference only
See Product Specifications
Part No. NTE104
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: BIPOLAR TRANSISTOR, PNP, -35V, TO-3; Tra; BIPOLAR TRANSISTOR, PNP, -35V, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-35V; Transition Frequency ft:300kHz; Power Dissipation Pd:90W; DC Collector Current:-10A; DC Current Gain hFE:90hFE; No. of Pins:2Pins
Datasheet: NTE104 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 36.5663 ea
Line Total: USD 36.57

15 - Global Stock
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 36.5663
10 : USD 29.715
25 : USD 29.2557
50 : USD 27.9694
100 : USD 26.4206
250 : USD 25.6987
500 : USD 25.0294

10 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 32.1048
2 : USD 30.3576
3 : USD 30.3439

14 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2
Multiples : 1
2 : USD 49.2298
3 : USD 48.3801
5 : USD 47.559
10 : USD 38.0032

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
No. Of Pins
LoadingGif

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NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO CollectorEmitter Voltage (R = 68 ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V BE CER EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A E Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Power Dissipation (T +55C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W C D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +100C stg Note 1. Matched pairs are available upon request (NTE104MP). Matched pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 0.6A, R = 68 35 V (BR)CER C(peak) BE Collector Cutoff Current I V = 30V, I = 0 1.0 mA CBO CB E DC Current Gain h V = 2V, I = 20mA 50 90 165 FE CE C BaseEmitter Input Voltage V V = 2V, I = 1A 0.38 V BE CE C CollectorEmitter Saturation Voltage V I = 4A, I = 0.4A 0.29 V CE(sat) C B Transition Frequency f V = 2V, I = 1A 300 kHz T CB E.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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