NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case de- signed for use in lowfrequency output amplifier, DC converter, and strobe applications. Features: High Collector Current: I = 5A Max C Low CollectorEmitter Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V CBO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V CollectorEmitter Voltage, V CEO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I CBO NTE11 V = 10V, I = 0 0.1 A CB E NTE12 V = 10V, I = 0 100 nA CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Emitter Cutoff Current I EBO NTE11 V = 7V, I = 0 0.1 A EB C NTE12 V = 5V, I = 0 1.0 A EB C CollectorEmitter Voltage V CEO NTE11 I = 1mA, I = 0 20 V C B NTE12 I = 1mA, I = 0 18 V C B EmitterBase Voltage V I = 10 A, I = 0 7 V EBO E C DC Current Gain h FE1 NTE11 V = 2V, I = 500mA, Note 1 340 600 CE C NTE12 V = 2V, I = 2A, Note 1 180 625 CE C NTE11 Only h V = 2V, I = 2A, Note 1 150 FE2 CE C CollectorEmitter Saturation Voltage V CE(sat) NTE11 I = 3A, I = 100mA, Note 1 1 V C B NTE12 I = 3A, I = 100mA, Note 1 0.4 1.0 V C B Transition Frequency f T NTE11 V = 6V, I = 50mA, f = 200MHz 150 MHz CB E NTE12 V = 6V, I = 50mA, f = 200MHz 120 MHz CB E Collector Output Capacitance C ob NTE11 V = 20V, I = 0, f = 1MHz 50 pF CB E NTE12 V = 20V, I = 0, f = 1MHz 60 pF CB E Note 1. Pulse measurement .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max