X-On Electronics has gained recognition as a prominent supplier of NTE153 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. NTE153 bipolar transistors - bjt are a product manufactured by NTE. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

NTE153

NTE153 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE153
Manufacturer: NTE
Category:Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 90V; 4A; 40W; TO220
Datasheet: NTE153 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 2.6125 ea
Line Total: USD 65.31

Availability - 93
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
93 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 25
Multiples : 1
25 : USD 2.6125
100 : USD 2.2125
250 : USD 2.075
500 : USD 1.95
1000 : USD 1.875
2500 : USD 1.8125
5000 : USD 1.7625
7500 : USD 1.7375

21 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.665
3 : USD 2.405
8 : USD 2.08
22 : USD 1.963
25 : USD 1.911

     
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We proudly offer the NTE153 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NTE153 Bipolar Transistors - BJT.

NTE152 (NPN) & NTE153 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220 type package designed for general purpose medium power switching and amplifier applications. Features: Good Linearity of h FE Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A E Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 90 V (BR)CEO C B Collector Cutoff Current I V = 90V, I = 0 20 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 0.5A 40 200 FE1 CE C h V = 5V, I = 3A 15 FE2 CE C CollectorEmitter Saturation Voltage V I = 3A, I = 0.3A 1.5 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 3A 1.5 V BE CE C Transition Frequency f V = 5V, I = 0.5A 3 8 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 85 pF ob CB E.420 (10.67) Max .110 (2.79) .500 .147 (3.75) (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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