NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for highvoltage TV video and chroma output circuits, highvoltage linear amplifiers, and high voltage transistor regulators. Features: High Collector Emitter Breakdown Voltage Voltage: V = 300V I = 1mA (BR)CER C Low Collector Base Capacitance: C = 3pF Max V = 20V cb CB Absolute Maximum Ratings: CollectorEmitter Voltage (I = 1mA, R = 10k, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . 300V C BE CER Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CBO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/ C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 C/W JA Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 C/W JC Lead Temperature (During Soldering, 1/16 from case, 10sec), T . . . . . . . . . . . . . . . . . . . . . +260 C L Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 300 V (BR)CER C B Collector Cutoff Current I V = 300V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO BE C ON Characteristics (Note 1) DC Current Gain h I = 4mA, V = 10V 20 FE C CE I = 20mA, V = 10V 30 150 C CE I = 40mA, V = 10V 20 C CE Dynamic Characteristics Current GainBandwidth Product f I = 20mA, V = 10V, f = 20MHz 50 MHz T C CE CollectorBase Capacitance C V = 20V, I = 0, f = 1MHz 3 pF cb CB E Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min EB C .100 (2.54) .100 (2.54)