NTE180MCP NTE

NTE180MCP electronic component of NTE
NTE180MCP NTE
NTE180MCP Bipolar Transistors - BJT
NTE180MCP  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE180MCP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE180MCP Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NTE180MCP
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 90V 30A 3-Pin(2+Tab) TO-3
Datasheet: NTE180MCP Datasheet (PDF)
Price (USD)
3: USD 21.2994 ea
Line Total: USD 63.9 
Availability : 0
  
QtyUnit Price
3$ 21.2994
5$ 17.9287
25$ 14.8837
50$ 14.6606
100$ 14.0044
250$ 13.2563
500$ 12.8887
1000$ 12.5606

Availability 0
Ship by Mon. 08 Sep to Fri. 12 Sep
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 21.2994
5$ 17.9287
25$ 14.8837
50$ 14.6606
100$ 14.0044
250$ 13.2563
500$ 12.8887
1000$ 12.5606


Availability 0
Ship by Thu. 04 Sep to Mon. 08 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 22.9248
2$ 15.0302
3$ 14.2103

   
Manufacturer
Product Category
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We are delighted to provide the NTE180MCP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE180MCP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE180 (PNP) & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: High DC Current Gain: h = 25 100 I = 7.5A FE C Excellent Safe Operating Area Absolute Maximum Ratings: CollectorEmitter Voltage, V . 100V CER CollectorBase Voltage, V 100V CB CollectorEmitter Voltage, V 90V CEO EmitterBase Voltage, V . 4V EB Collector Current, I 30A C Base Current, I 7.5A B Total Device Dissipation (T = +25C), P . 200W C D Derate Above 25C 1.14W/C Operating Junction Temperature Range, T 65 to +200C J Storage Temperature Range, T 65 to +200C stg Thermal Resistance, JunctiontoCase, R . 0.875C/W thJC Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, R = 100 , Note 1 100 V (BR)CER C BE CollectorEmitter Sustaining Voltage V I = 200mA, Note 1 90 V CEO(sus) C CollectorBase Cutoff Current I V = 100V, I = 0 1.0 mA CBO CB E V = 100V, I = 0, T = +150C 5.0 mA CB E C EmitterBase Cutoff Current I V = 4V, I = 0 1.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Contd): (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 7.5A, V = 2V 25 100 FE C CE BaseEmitter ON Voltage V I = 7.5A, V = 2V 1.3 V BE(on) C CE CollectorEmitter Saturation Voltage V I = 7.5A, I = 750mA 0.8 V CE(sat) C B BaseEmitter Saturation Voltage V I = 7.5A, I = 750mA 1.3 V BE(sat) C B Dynamic Characteristics Current GainBandwidth Product f I = 1A, V = 10V, f = 1MHz 2.0 MHz T C CE Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%. Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and NTE181 (NPN)135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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