NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 10A High Current Gain Bandwidth Product: f = 2MHz (Min) I = 500mA T C Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W C D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39 C/W thJC Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 1 60 V CEO(sus) C B Collector Cutoff Current I V = 30V, I = 0 700 A CEO CE B I V = 70V, V = 1.5V 1.0 mA CEX CE BE(off) V = 70V, V = 1.5V, 5.0 mA CE BE(off) T = +150 C C I V = 70V, I = 0 1.0 mA CBO CB E V = 70V, I = 0, T = +150 C 10 mA CB E C Emitter Cutoff Current I V = 5V, I = 0 5.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Contd): (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 4A, V = 4V 20 100 FE C CE I = 10A, V = 4V 5.0 C CE Base Emitter ON Voltage V I = 4A, V = 4V 1.8 V BE(on) C CE CollectorEmitter Saturation Voltage V I = 4A, I = 400mA 1.1 V CE(sat) C B I = 10A, I = 3.3A 8.0 V C B Dynamic Characteristics Current Gain Bandwidth Product f I = 500mA, V = 10V, 2.0 MHz T C CE f = 1MHz Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%. .530 (13.4) Max .143 (3.65) Dia Thru .668 (17.0) Max EBC .655 (16.6) Max C (Heat Sink Area) .166 (4.23) Heat Sink Contact .150 (3.82) Max Area (Bottom)