NTE186 (NPN) & NTE187 (PNP) Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/converters, and many other general purpose applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation, P T T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1W A Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 from case for 10sec max), T . . . . . . . . . . . . . . . +260C L Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W thJAElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 1V, I = 200mA 100 220 FE CE C V = 1V, I = 2A 20 CE C Collector Saturation Voltage V I = 1A, I = 50mA 0.5 V CE(sat) C B Base Saturation Voltage V I = 1A, I = 100mA 1.3 V BE(sat) C B Collector Cutoff Current I V = 70V, T = +25C 10 A CES CE J Emitter Cutoff Current I V = 5V, T = +25C 100 A EBO EB J Collector Capacitance C V = 10V, f = 1MHz 100 pF cbo CB Current GainBandwidth Product f V = 4V, I = 20mA 50 MHz T CE C Delay Time t I = 1A, I = I = 100mA 100 ns d C B1 B2 Rise Time t 100 ns r Storage Time t 500 ns s Fall Time t 75 ns f .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min BC E .100 (2.54) .100 (2.54)
