NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack- age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: h = 2.3 Min I = 7A FE C CollectorEmitter Sustaining Voltage: V = 70V Min CEO(sus) High CurrentGain Bandwidth Product: f = 4MHz Min I = 500mA (NTE196) T C = 10MHz Min I = 500mA (NTE197) C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 70 V CEO(sus) C B Collector Cutoff Current I V = 60V, I = 0 1.0 mA CEO CE B I V = 80V, V = 1.5V 100 A CEX CE EB(off) V = 80V, V = 1.5V, T = +150C 2.0 mA CE EB(off) C Emitter Cutoff Current I V = 5V, I = 0 1.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 2A, V = 4V 30 150 FE C CE I = 7A, V = 4V 2.3 C CE CollectorEmitter Saturation Voltage V I = 7A, I = 3A 3.5 V CE(sat) C B BaseEmitter ON Voltage V I = 7A, V = 4V 3.0 V BE(on) C CE Dynamic Characteristics CurrentGain Bandwidth Product f T NTE196 4 MHz I = 500mA, V = 4V, f = 1MHz, C CE test Note 2 NTE197 10 MHz Output Capacitance C V = 10V, I = 0, f = 1MHz 250 pF ob CB E SmallSignal Current Gain h I = 500mA, V = 4V, f = 50kHz 20 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. f = h f T fe test .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab