NTE2312 NTE

NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for highvoltage, high speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switchmode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Emitter Current, I E Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJA Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . . . . . . . . . +275C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 10mA, I = 0 400 V CEO(sus) C B Collector Cutoff Current I V = 700V, V = 1.5V 1 mA CEV CEV BE(off) V = 700V, V = 1.5V, 5 mA CEV BE(off) T = +100C C Emitter Cutoff Current I V = 9V, I = 0 1 mA EBO EB c ON Characteristics (Note 2) DC Current Gain h I = 2A, V = 5V 8 60 FE C CE I = 5A, V = 5V 5 30 C CE CollectorEmitter Saturation Voltage V I = 2A, I = 0.4A 1 V CE(sat) C B I = 5A, I = 1A 2 V C B I = 8A, I = 2A 3 V C B I = 5A, I = 1A, T = +100C 3 V C B C BaseEmitter Saturation Voltage V I = 2A, I = 0.4A 1.2 V BE(sat) C B I = 5A, I = 1A 1.6 V C B I = 5A, I = 1A, T = +100C 1.5 V C B C Dynamic Characteristics CurrentGain Bandwidth Product f I = 500mA, V = 10V, f = 1MHz 4 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 0.1MHz 110 pF ob CB E Switching Characteristics (Resistive Load) Delay Time t V = 125V, I = 5A, 0.05 0.1 s d CC C I = I = 1A, t = 25 s, B1 B2 p Rise Time t 0.8 1.5 s r Duty Cycle Duty Cycle 1% 1% Storage Time t 1.0 3.0 s s Fall Time t 0.15 0.7 s f Switching Characteristics (Inductive Load), Clamped Voltage Storage Time t I = 5A, V = 300V, I = 1A, 0.86 2.3 s sv C clamp B1 V = 5V, T = +100C BE(off) C Crossover Time t 0.14 0.7 s c Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.