Product Information

NTE2329

NTE2329 electronic component of NTE

Datasheet
Transistor: PNP; bipolar; 200V; 15A; 150W; TO3-PBL
Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 9.45 ea
Line Total: USD 47.25

16 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
16 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1
5 : USD 9.45
25 : USD 8.2625
100 : USD 7.2875
250 : USD 6.875
500 : USD 6.6875
1000 : USD 6.5
2500 : USD 6.4125
5000 : USD 6.1875

8 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 9.854
3 : USD 6.994
7 : USD 6.617

Read More Specifications

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Additional Infomation About Product

NTE2328 (NPN) & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 5.0 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 5.0 A EBO BE C CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 200 V (BR)CEO C B DC Current Gain h V = 5V, I = 1A 55 160 FE1 CE C h V = 5V, I = 8A 35 60 FE2 CE C Collector Emitter Saturation Voltage V I = 10A, I = 1A 1.5 3.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 8A 1.0 1.5 V BE CE C Transistion Frequency f V = 5V, I = 1A 25 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 470 pF ob CB E.810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BC E Note: Collector connected to heat sink.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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