X-On Electronics has gained recognition as a prominent supplier of NTE2329 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. NTE2329 bipolar transistors - bjt are a product manufactured by NTE. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

NTE2329 NTE

NTE2329 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2329
Manufacturer: NTE
Category:Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 200V; 15A; 150W; TO3-PBL
Datasheet: NTE2329 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 9.45 ea
Line Total: USD 47.25

Availability - 16
Ships to you between
Tue. 04 Jun to Mon. 10 Jun
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
16 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 5
Multiples : 1
5 : USD 9.45
25 : USD 8.2625
100 : USD 7.2875
250 : USD 6.875
500 : USD 6.6875
1000 : USD 6.5
2500 : USD 6.4125
5000 : USD 6.1875

8 - WHS 2


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 9.854
3 : USD 7.124
7 : USD 6.734

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We are delighted to provide the NTE2329 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2329 and other electronic components in the Bipolar Transistors - BJT category and beyond.

NTE2328 (NPN) & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 5.0 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 5.0 A EBO BE C CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 200 V (BR)CEO C B DC Current Gain h V = 5V, I = 1A 55 160 FE1 CE C h V = 5V, I = 8A 35 60 FE2 CE C Collector Emitter Saturation Voltage V I = 10A, I = 1A 1.5 3.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 8A 1.0 1.5 V BE CE C Transistion Frequency f V = 5V, I = 1A 25 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 470 pF ob CB E.810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BC E Note: Collector connected to heat sink.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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