NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: High Breakdown Voltage Large Current Capacity Isolated Package Applications: Color TV Audio Output Converters Inverters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I = 100mA 140 400 FE CE C V = 5V, I = 10mA 90 CE C Gain Bandwidth Product f V = 10V, I = 50mA 120 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2519 C V = 10V, f = 1MHz 14 pF ob CB NTE2520 22 pF Collector to Emitter Saturation Voltage NTE2519 V I = 500mA, I = 50mA 0.13 0.45 V CE(sat) C B NTE2520 0.2 0.5 V Base to Emitter Saturation Voltage V I = 500mA, I = 50mA 0.85 1.2 V BE(sat) C B Collector to Base Breakdown Voltage V I = 10 A, I = 0 180 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I = 1mA, R = 160 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C Rise Time t I = 10A, I = 10A, 0.04 s on C B1 I = 700mA, Note 1 B2 Storage Time NTE2519 t 1.2 s stg NTE2520 0.7 s Fall Time NTE2519 t 0.08 s f NTE2520 0.04 s Note 1. Pulse Width = 20 s, Duty Cycle 1%. .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)