X-On Electronics has gained recognition as a prominent supplier of NTE2575 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. NTE2575 bipolar transistors - bjt are a product manufactured by NTE. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

NTE2575 NTE

NTE2575 electronic component of NTE
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See Product Specifications
Part No.NTE2575
Manufacturer: NTE
Category:Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 120V; 400mA; 10W; TO220FP
Datasheet: NTE2575 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 5.4902 ea
Line Total: USD 109.8

Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 20
Multiples : 1
20 : USD 5.4902
50 : USD 3.1646
100 : USD 2.9194
200 : USD 2.7077
500 : USD 2.5294

0 - WHS 2


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 5.67
3 : USD 5.11
5 : USD 3.71
12 : USD 3.514

     
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We are delighted to provide the NTE2575 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2575 and other electronic components in the Bipolar Transistors - BJT category and beyond.

NTE2574 (NPN) & NTE2575 (PNP) Silicon Complementary Transistors Video Output for HDTV TO220 Full Pack Features: High Collector Emitter Breakdown Voltage: V = 120V Min CEO High Gain Bandwidth Product: f = 400MHz Typ T Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics: NTE2574: C = 2.7pF re NTE2575: C = 4.0pF re Absolute Maximum Ratings: (T = +25C unless otherwise specified) C Collector Base Voltage, V ...................................................... 120V CBO CollectorEmitter Voltage, V ..................................................... 120V CEO EmitterBase Voltage, V .......................................................... 3V EBO Collector Current, I C Continuous ............................................................... 400mA Peak .................................................................... 600mA Collector Power Dissipation, P C T = +25C ................................................................. 1.8W C T = +50C ................................................................. 10W A Operating Junction Temperature, T +150............................................... C J Storage Temperature Range, T .......................................... 55 to +150C stg Note 1. NTE2574 is a discontinued device and no longer available. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 1.0 A EBO EB C DC Current Gain h V = 10V, I = 50mA 100 320 FE CE C V = 10V, I = 200mA 20 CE C Gain Bandwidth Product f V = 10V, I = 50mA 400 MHz T CE C Output Capacitance C ob NTE2574 V = 30V, f = 1MHz 3.1 pF CB NTE2575 4.4 pF Rev. 615Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Reverse Transfer Capacitance C re NTE2574 V = 30V, f = 1MHz 2.7 pF CB NTE2575 4.0 pF CollectorEmitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V CE(sat) C B Emitter Base Saturation Voltage V I = 50mA, I = 5mA 1.0 V BE(sat) C B .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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