NTE2585 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE2585 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2585 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE2585
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; 800V; 20mA; 1.65W
Datasheet:	NTE2585 Datasheet (PDF)

Price (USD)

20: USD 3.735 ea
Line Total: USD 74.7

Availability : 0

Qty	Unit Price
20	$ 3.735
50	$ 2.2464
100	$ 2.0736
200	$ 1.9008
500	$ 1.7712

NTE2585 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Mon. 08 Sep to Fri. 12 Sep

MOQ : 20
Multiples : 1

Qty	Unit Price
20	$ 3.735
50	$ 2.2464
100	$ 2.0736
200	$ 1.9008
500	$ 1.7712

Availability 0

Ship by Thu. 04 Sep to Mon. 08 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 3.9893
3	$ 3.5959
6	$ 2.6188
17	$ 2.4696

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Type Of Transistor Npn Npn
Collector-Emitter Voltage 800 V 800 V
Collector Current 20 mA 20 mA
Power Dissipation 1.65 W 1.65 W
Current Gain 20 To 50 20 To 50
Frequency 40 MHz 40 MHz

We are delighted to provide the NTE2585 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2585 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: High Breakdown Voltage Low Output Capacitance High Reliability Intended for HighDensity Mounting (Suitable for Sets Whose Height is Restricted) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 1 A EBO EB C DC Current Gain h V = 5V, I = 2mA 20 50 FE CE C V = 5V, I = 10mA 10 CE C GainBandwidth Product f V = 10V, I = 2mA 40 MHz T CE C Output Capacitance C V = 100V, f = 1MHz 1.6 pF ob CB Collector Emitter Saturation Voltage V I = 10mA, I = 2mA 1.0 V CE(sat) C B Base Emitter Saturation Voltage V I = 10mA, I = 2mA 1.5 V BE(sat) C B Collector Base Breakdown Voltage V I = 100 A, I = 0 800 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 800 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 100 A, I = 0 7 V (BR)EBO E C.177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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