NTE2590 NTE

NTE2590 electronic component of NTE
NTE2590 NTE
NTE2590 Bipolar Transistors - BJT
NTE2590  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE2590 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2590 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NTE2590
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 900V; 50mA; 1.2W
Datasheet: NTE2590 Datasheet (PDF)
Price (USD)
20: USD 4.68 ea
Line Total: USD 93.6 
Availability : 0
  
QtyUnit Price
20$ 4.68
50$ 3.132
100$ 2.8836
200$ 2.6784
500$ 2.5056

Availability 0
Ship by Mon. 08 Sep to Fri. 12 Sep
MOQ : 20
Multiples : 1
QtyUnit Price
20$ 4.68
50$ 3.132
100$ 2.8836
200$ 2.6784
500$ 2.5056


Availability 0
Ship by Thu. 04 Sep to Mon. 08 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.6176
3$ 5.0477
5$ 3.6772
12$ 3.4737

   
Manufacturer
Product Category
Polarisation
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2590 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2590 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2590 Silicon NPN Transistor High Voltage Amp/Switch Features: High Breakdown Voltage, High Reliability Low Output Capacitance Wide ASO Range Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 900V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I =2mA 20 50 120 FE CE C GainBandwidth Product f V = 10V, I = 2mA 6 MHz T CE C Output Capacitance C V = 100V, f = 1MHz 2.0 pF ob CB Collector Emitter Saturation Voltage V I = 5mA, I = 1mA 5 V CE(sat) C B Base Emitter Saturation Voltage V I =5A, I = 1mA 2 V BE(sat) C B Collector Base Breakdown Voltage V I = 1mA, I = 0 1700 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 900 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 5 V (BR)EBO E C.177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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